Numerical Calculations of the Electrical Effects Induced by Structural Imperfections on MOS Capacitors
| Autor: | Vitor Baranauskas, M. C. Valente Lopes, Claus Martin Hasenack |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Yield (engineering)
Materials science Condensed matter physics Mathematical model Renewable Energy Sustainability and the Environment Silicon dioxide Transistor Condensed Matter Physics Crystallographic defect Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Capacitor chemistry law Electric field Electrical equipment Materials Chemistry Electrochemistry |
| Zdroj: | Journal of The Electrochemical Society. 141:1621-1628 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2054972 |
| Popis: | As the thickness of gate quality SiO[sub 2] is reduced, minor structural interface imperfections begin to play an important role in device performance and yield. To isolate the effects of a variety of such interface imperfections on electric field distribution within the SiO[sub 2] layer of biased metal oxide semiconductor capacitors, numerical calculations were carried out. The results indicate that strong electric field distortions may be expected for almost any interfacial defect configuration being highest for metal precipitates. Technological consequence of the findings are also discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|