A Compact 75 GHz LNA with 20 dB Gain and 4 dB Noise Figure in 22nm FinFET CMOS Technology
| Autor: | Steven Callender, Christopher D. Hull, Stefano Pellerano, Woorim Shin |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Physics
Noise measurement business.industry 020208 electrical & electronic engineering Bandwidth (signal processing) Electrical engineering Power efficient 020206 networking & telecommunications 02 engineering and technology Noise figure Dc current CMOS Current consumption Power consumption 0202 electrical engineering electronic engineering information engineering business |
| Zdroj: | 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). |
| Popis: | This paper presents E-band (71–76 GHz) LNA design in 22nm CMOS FinFET technology. Stacked topology with DC current re-use for 2-stage cascaded LNA results in power efficient design with high performance. Measurement shows peak gain of 20 dB and minimum noise figure of 4 dB with 10.8 mA current consumption from 1 V supply. Measured 3-dB bandwidth is 10.4 GHz and input P 1dB is −22.8 dBm. The active layout area of the LNA is 0.155 mm2. To the authors' knowledge, these are the state-of-art values in terms of noise figure and DC power consumption among E-band CMOS LNAs reported in the literature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|