The design of quantum-confined Stark effect modulators for integration with 1.5 mu m lasers
| Autor: | Siu Ling Wong, Robin J. Nicholas, Robert W. Martin, M. A. Gibbon, E J Thrush, Klaus Satzke |
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| Rok vydání: | 1993 |
| Předmět: |
Photocurrent
business.industry Chemistry Quantum-confined Stark effect Physics::Optics Condensed Matter Physics Laser Electronic Optical and Magnetic Materials Semiconductor laser theory law.invention symbols.namesake Optics Optical modulator Stark effect law Electric field Materials Chemistry symbols Optoelectronics Electrical and Electronic Engineering business Wave function |
| Zdroj: | Semiconductor Science and Technology. 8:1173-1178 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | Various factors affecting the design of an optical modulator based on the quantum-confined Stark effect and suitable for integration with a 1.55 mu m InGaAs(P) laser are considered. Multiple quantum well (MQW) structures comprising various combinations of InP, InGaAs, InGaAsP and InGaAlAs materials are considered both theoretically and experimentally. Calculations of Stark shifts and overlap integrals, as functions of applied electric field are used to assess the potential for modulator performance. A quaternary/quaternary system is shown to give the best performance at the wavelength of interest and this has been demonstrated using MOVPE-grown structures. The calculations of Stark shifts and wavefunction localization have also been employed to assess the optimum layer thicknesses in the MQW and are compared with photocurrent data. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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