Improved Resistive-switching Performance of HfO2-based RRAM devices by Reduction Effect of Hydrogen Annealing: Defect Engineering

Autor:	Daeseok Lee, Seonghyun Kim, Jungho Shin, Sungjune Jung, Euijun Cha, Hann-Ping Hwang, Jiyong Woo, Wootae Lee, Jubong Park, Godeuni Choi
Rok vydání:	2012
Předmět:	Reduction (complexity) Hydrogen annealing Materials science business.industry Resistive switching Optoelectronics Defect engineering business Resistive random-access memory
Zdroj:	Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2012.b-6-4
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::15f285b0a2906c4666037995319a8181 https://doi.org/10.7567/ssdm.2012.b-6-4 Zobrazit plný text záznamu