All-Dielectric Silicon Nanoslots for Er3+ Photoluminescence Enhancement
| Autor: | Tiziana Cesca, Sandro Mignuzzi, Giovanni Mattei, Stefan A. Maier, Ionut Gabriel Balasa, Boris Kalinic, Riccardo Sapienza, Andrea Jacassi |
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| Rok vydání: | 2020 |
| Předmět: |
Photoluminescence
Materials science Local density of states Silicon General Physics and Astronomy chemistry.chemical_element Near and far field 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Wavelength chemistry 0103 physical sciences Atomic physics 010306 general physics 0210 nano-technology Intensity (heat transfer) Nanopillar |
| Zdroj: | Physical Review Applied. 14 |
| ISSN: | 2331-7019 |
| Popis: | We study, both experimentally and theoretically, the modification of ${\mathrm{Er}}^{3+}$ photoluminescence properties in $\mathrm{Si}$ dielectric nanoslots. The ultrathin nanoslot (down to 5-nm thickness), filled with $\mathrm{Er}$ in ${\mathrm{Si}\mathrm{O}}_{2}$, boosts the electric and magnetic local density of states via coherent near-field interaction. We report an experimental 20-fold enhancement of the radiative decay rate with negligible losses. Moreover, via modifying the geometry of the all-dielectric nanoslot, the outcoupling of the emitted radiation to the far field can be strongly improved, without affecting the strong decay-rate enhancement given by the nanoslot structure. Indeed, for a periodic square array of slotted nanopillars an almost one-order-of-magnitude-higher ${\mathrm{Er}}^{3+}$ PL intensity is measured with respect to the unpatterned structures. This has a direct impact on the design of more efficient CMOS-compatible light sources operating at telecom wavelengths. |
| Databáze: | OpenAIRE |
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