Characterization of p-n junctions under the influence of a time varying mechanical strain
| Autor: | L. K. Monteith, J.J. Wortman |
|---|---|
| Rok vydání: | 1973 |
| Předmět: |
Materials science
Cantilever Silicon Strain (chemistry) business.industry chemistry.chemical_element Structural engineering Condensed Matter Physics Electronic Optical and Magnetic Materials Characterization (materials science) Generator (circuit theory) Semiconductor chemistry Materials Chemistry Electrical and Electronic Engineering Composite material Electronic band structure business |
| Zdroj: | Solid-State Electronics. 16:229-237 |
| ISSN: | 0038-1101 |
| Popis: | This paper is concerned with the influence of time varying mechanical stress on the electrical properties of p-n junctions. A strain generator based upon a vibrating cantilever beam is described. Data obtained on silicon junctions are presented and compared to a theoretical model for the effects. The results indicate that the major effect of mechanical strain is to change the energy band structure of the semiconductor. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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