Semiconductor circuit elements
| Autor: | A E de Barr, J B Gunn, J S Blakemore |
|---|---|
| Rok vydání: | 1953 |
| Předmět: |
Physics
Silicon business.industry Transistor General Physics and Astronomy chemistry.chemical_element Electrical element Germanium Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Noise (electronics) Engineering physics law.invention Condensed Matter::Materials Science Semiconductor Rectification chemistry law business Diode |
| Zdroj: | Reports on Progress in Physics. 16:160-215 |
| ISSN: | 0034-4885 |
| DOI: | 10.1088/0034-4885/16/1/305 |
| Popis: | Recent advances in the theory of the conduction mechanism in semiconductors and semiconductor-metal systems are reviewed, together with their properties and applications. Since the more important advances relate to systems whose properties depend upon the simultaneous flow of electrons and holes, discussion is limited mainly to those materials, such as silicon and germanium, in which this phenomenon is observed. A brief account is given of the fundamental concepts of semiconductor theory after which such bulk properties of semiconductors as conductivity, behaviour of minority carriers, magnetic effects, noise and optical effects are discussed. Modern theories of rectification and transistor action at metal-semiconductor contacts and p-n junctions are then considered, and descriptions given of the mechanisms and properties of practical circuit elements such as crystal diodes and transistors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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