Photon-Induced Negative Capacitance in Metal Oxide Semiconductor Structures
| Autor: | M. P. Anantram, Simarjeet S. Saini, Anita Fadavi Roudsari, Iman Khodadad |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Differential capacitance Gate dielectric Silicon on insulator Nanotechnology Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Dielectric 01 natural sciences Capacitance law.invention Quantum capacitance Hardware_GENERAL law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Electrical and Electronic Engineering 010302 applied physics business.industry Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Computer Science Applications Capacitor Semiconductor Optoelectronics 0210 nano-technology business Hardware_LOGICDESIGN |
| Zdroj: | IEEE Transactions on Nanotechnology. 15:715-719 |
| ISSN: | 1941-0085 1536-125X |
| DOI: | 10.1109/tnano.2016.2519897 |
| Popis: | Design and fabrication of photon-induced negative capacitance is presented. The capacitor is implemented using Silicon on Insulator Metal Oxide Semiconductor platform, where the gate dielectric is made of a nonferroelectric material. Operating at room temperature, when the device is illuminated, in depletion mode the total capacitance grows in magnitude to values larger than the geometrical capacitance. We believe this is caused by the trap states existing at the interface of dielectric and semiconductor layers, and present the supporting modeling results. Using our model, we investigate the role of the trap density and light intensity, as well as the device geometry such as gate-ground position and the thickness of the silicon layer. Our model shows the depletion capacitance can grow to values more than three times larger than the geometrical capacitance. |
| Databáze: | OpenAIRE |
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