Pressure induced semiconductor-metal transition in polycrystalline β-Ag0.33V2O5
| Autor: | Lixin Liu, Yuan Wang, Liang Xu, Xiuxia Cao, Guangtao Liu, Chuanmin Meng, Wenjun Zhu, Yun Zhou, Tao Wu, Xuhai Li, Zhenghua He |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Condensed matter physics business.industry Mechanical Engineering 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Temperature induced Transition pressure 0104 chemical sciences Metal Semiconductor Electrical resistance and conductance Mechanics of Materials visual_art visual_art.visual_art_medium General Materials Science Electronics Crystallite 0210 nano-technology business Electronic properties |
| Zdroj: | Materials Letters. 236:271-275 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/j.matlet.2018.10.069 |
| Popis: | The pressure-dependent electronic properties of polycrystalline β-Ag0.33V2O5 were investigated and a discontinuous change of electrical resistance is found at around 4.5 GPa, where semiconductive-like decreasing trend before 4.5 GPa and a metallic-like increasing trend after 4.5 GPa with increasing temperature was observed. Furthermore, high temperature/pressure treatment can markedly reduce the semiconductor-metal (S-M) transition pressure to around 1.5 GPa. The results indicate a promising way for engineering the electronic properties of polycrystalline Ag0.33V2O5, and this pressure/temperature induced semiconductor-metal switch may have potential applications in electronics field. |
| Databáze: | OpenAIRE |
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