Stability of single-atomic-layer-height disconnections on (101¯2) twin boundary in Mg

Autor:	Yuan Yue, Yu Zhang, Jian Nie
Rok vydání:	2022
Předmět:	Materials science Plane (geometry) Mechanical Engineering Metals and Alloys Stacking Geometry Condensed Matter Physics Fault (power engineering) Stability (probability) Mechanics of Materials General Materials Science Disconnection Crystal twinning Layer (electronics) Stacking fault
Zdroj:	Scripta Materialia. 209:114407
ISSN:	1359-6462
Popis:	Four different configurations of single-atomic-layer-height disconnections on ( 10 1 ¯ 2 ) twin boundary in magnesium are investigated using molecular dynamics simulations. It is found that a prismatic-basal (PB) single-atomic-layer-height disconnection is more stable than a basal-prismatic (BP) single-atomic-layer-height disconnection when each of them is connected with an I1 stacking fault associated with a stacking sequence change of BA B CB. In contrast, a BP single-atomic-layer-height disconnection is more stable than a PB single-atomic-layer-height disconnection when each of them is connected with an I1 fault associated with a stacking sequence change of AB A CA. A stable BP (or PB) single-atomic-layer-height disconnection can transform to a stable PB (or BP) single-atomic-layer-height disconnection when its step orientation changes with a change in the lying plane of the connected I1 fault.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::15ce4f6172adcbb8ecf640ecb7369a01 https://doi.org/10.1016/j.scriptamat.2021.114407 Zobrazit plný text záznamu Full Text from ScienceDirect