Analysis of fluorescence line shapes for free‐to‐bound transitions in semiconductors
| Autor: | M. O. Vassell, R. H. Bartram, S. Zemon |
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| Rok vydání: | 1986 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 60:4248-4252 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.337463 |
| Popis: | A theoretical model is presented for the physical description of free‐to‐bound transitions to deep levels in semiconductors and for the synthesis of their fluorescence line shapes. The analysis takes account of broadening by emission and absorption of lattice quanta, by the continuum of initial electronic states, and by the random distribution of impurity sites or other inhomgeneous mechanisms. The vibrational contribution is developed for linear coupling to a single vibrational mode in the harmonic approximation, and for linear coupling to many modes having a range of vibrational frequencies, including the specialization of the latter results to the ‘‘narrow coupling’’ limit. The electronic contribution is specified only for thermal broadening by conduction‐band states. The contribution of inhomogeneous mechanisms is modeled by Gaussian distributions. Formulas for the line‐shape function and its initial moments are provided for use in fitting and interpreting experimental photoluminescence data. Use of t... |
| Databáze: | OpenAIRE |
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