Rapid Thermal Process Integration

Autor: A.A. Naem, I.D. Calder
Rok vydání: 1989
Předmět:
Zdroj: MRS Proceedings. 146
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-146-203
Popis: The capability of rapid thermal processing (RTP) to perform many of the thermal steps required for semiconductor device fabrication has been investigated and demonstrated thoroughly over the past few years and many excellent reviews of these techniques are now available1,2. Hundreds of papers have been published dealing with isolated RTP process techniques such as oxidation/nitridation3,4, junction annealing5–7, thermal silicidation8,9, densification and reflow of deposited oxides10,11, and contact sintering12. These techniques are now being implemented in prototyping and manufacturing lines, often replacing several different conventional furnace processing steps. Therefore integration of RTP into a full device process must be studied. The effects of RTP fall into two general categories: for the circuit designer, optimized circuit performance and reliability are required; for the process designer, the need is for a simple, robust, manufacturable process in which interactions between different steps do not adversely affect the properties of existing materials and structures. These interactions are particularly significant for thermal steps, since the thermal budget of a complete device process is cumulative.
Databáze: OpenAIRE
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