Formation of carbon nitride — a novel hard coating

Autor:	Jose Fernando Diniz Chubaci, J. P. Biersack, Kiyoshi Ogata, Shigueo Watanabe, Fuminori Fujimoto
Rok vydání:	1996
Předmět:	Nuclear and High Energy Physics Materials science Inorganic chemistry chemistry.chemical_element Chemical vapor deposition Plasma engineering.material Nitrogen chemistry.chemical_compound Flux (metallurgy) chemistry Coating Tungsten carbide engineering Wafer Instrumentation Carbon nitride
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 116:452-456
ISSN:	0168-583X
DOI:	10.1016/0168-583x(96)00087-0
Popis:	Increasing efforts have been reported on the formation of carbon nitride. Vapor deposition and simultaneous ion bombardment from accelerators or plasmas (IBAD) proved to be a successful technique for the preparation of this material. In our preparation, the properties of the films were controlled by varying the nitrogen ion energy and the flux composition ratio C N . The deposited films with high nitrogen incorporation ( C N = 0.6 ∼ 0.7 ) and low implantation energies ( C N ratio. This turned on to be useful in understanding the formation process of the carbon nitride films grown on silicon wafers, fused silica and tungsten carbide substrates.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::159b775da3ab431a9e6872bd4ae4ce84 https://doi.org/10.1016/0168-583x(96)00087-0 Zobrazit plný text záznamu Full Text from ScienceDirect