High temperature silicon carbide stabilitrons for the voltage range from 4 to 50 V

Autor:	N.S. Savkina, M. M. Anikin, V. V. Zelenin, A. A. Lebedev, A.L. Syrkin, Anatoly M. Strel'chuk, P. A. Ivanov, M. G. Rastegaeva, A. N. Andreev, V. E. Chelnokov
Rok vydání:	1995
Předmět:	Materials science business.industry Mechanical Engineering Condensed Matter Physics chemistry.chemical_compound chemistry Mechanics of Materials Silicon carbide Optoelectronics General Materials Science Voltage range Sublimation (phase transition) business Voltage
Zdroj:	Materials Science and Engineering: B. 29:190-193
ISSN:	0921-5107
DOI:	10.1016/0921-5107(94)04050-e
Popis:	Voltage stabilitrons based on 6H-SiC p-n structures produced by the open-system sublimation technique have been fabricated. Stabilization voltages were in the range 4–50 V. Operating currents were from 1 to 100 mA. Differential resistance was in the range 10–20 Ω at 100 mA current. Upper ambient temperature was 300 °C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::159b0f5046b557218ff1a01284f57a2e https://doi.org/10.1016/0921-5107(94)04050-e Zobrazit plný text záznamu Full Text from ScienceDirect