A Novel Body-Tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode
| Autor: | Hyung Joun Yoo, Won-Gu Kang Kang, Jong-Son Lyu |
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| Rok vydání: | 1996 |
| Předmět: |
Materials science
General Computer Science Subthreshold conduction business.industry Wafer bonding Transistor Electrical engineering Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Substrate (electronics) Electronic Optical and Magnetic Materials law.invention Hardware_GENERAL law Electrode Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Hardware_LOGICDESIGN Floating body effect |
| Zdroj: | ETRI Journal. 17:1-12 |
| ISSN: | 1225-6463 |
| DOI: | 10.4218/etrij.96.0196.0041 |
| Popis: | A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current () curves, substrate resistance effect on the curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits. |
| Databáze: | OpenAIRE |
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