Innovative GeS2/Sb2Te3 based phase change memory for low power applications
| Autor: | N. Castellani, Nicolas Bernier, Luca Perniola, Anthonin Verdy, Mathieu Bernard, Veronique Sousa, Guillaume Bourgeois, Serge Blonkowski, Sophie Chevalliez, Philippe Kowalczyk, Gabriele Navarro, J. Kluge, Pierre Noé |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Thermal resistance 02 engineering and technology Conductivity 021001 nanoscience & nanotechnology 01 natural sciences Power (physics) Reduction (complexity) Phase-change memory 0103 physical sciences Thermal Optoelectronics Thermal stability 0210 nano-technology business Electrical efficiency |
| Zdroj: | NVMTS |
| Popis: | In this paper, we analyze the electrical performance of a novel Phase-Change Memory (PCM) device based on GeS 2 /Sb 2 Te 3 composition (GSST). Through physico-chemical analysis and electrical characterization we demonstrate a great reduction of the RESET programming current in unitary GSST devices. We show, how both electrical and thermal confinement improvement is achieved in GSST layers, contributing to the power efficiency increase of the device. Finally, an enhanced thermal stability of more than 290 °C is achieved. By TEM analysis of the fully integrated device we could demonstrate the phase separation between GeS 2 and Sb 2 Te 3 , supporting the hypothesis that the device switches only in a reduced crystalline volume in a fully amorphous matrix. This result enables GSST PCM as a possible candidate for low power/high density memory applications. |
| Databáze: | OpenAIRE |
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