100 A Vertical GaN Trench MOSFETs with a Current Distribution Layer
Autor: | Tohru Oka, Yukihisa Ueno, Junya Nishii, Tsutomu Ina |
---|---|
Rok vydání: | 2019 |
Předmět: |
010302 applied physics
Materials science Current distribution business.industry 020208 electrical & electronic engineering Gallium nitride 02 engineering and technology 01 natural sciences chemistry.chemical_compound chemistry 0103 physical sciences MOSFET Trench 0202 electrical engineering electronic engineering information engineering Optoelectronics High current Drain current business Current density Layer (electronics) |
Zdroj: | 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
DOI: | 10.1109/ispsd.2019.8757621 |
Popis: | This paper reports on vertical GaN-based trench MOSFETs operating at 100 A for the first time. A current distribution layer (CDL) in a drift layer is employed for the high current operation. An effective insert position of the CDL is designed and, thereby, the current density of the MOSFET with the CDL is increased about 1.17 times higher than that of the MOSFET without the CDL. Large MOSFET chips with a drain current of up to 100 A are fabricated and their switching characteristics are demonstrated. |
Databáze: | OpenAIRE |
Externí odkaz: |