Formation of high-conductivity NiSi 2 layers on Si at zero-mismatch temperature by high-current Ni-ion implantation
| Autor: | B. X. Liu, K.Y. Gao |
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| Rok vydání: | 1999 |
| Předmět: | |
| Zdroj: | Applied Physics A: Materials Science & Processing. 68:333-337 |
| ISSN: | 1432-0630 0947-8396 |
| Popis: | and Si lattices at 380 °C, which was defined as zero-mismatch temperature. The implantation was conducted with a metal vapor vacuum arc (MEVVA) ion implanter at an extraction voltage of 45 kV. Based on a thermal conduction estimation, a temperature rise of 380 °C required the Ni-ion current density to be 35 μA/cm2. For the Si(111) wafers, the high conducting NiSi2 layers were indeed directly formed after Ni-ion implantation with this specific current density to a normal dose of 2×1017 ions/cm2 and the resistivity was as low as 9 μΩ cm. For the Si(111) wafers pre-covered with a 10-nm Ni overlayer, the resistivity of the NiSi2 layers obtained under the same conditions decreased down to about 6 μΩ cm. The superior electrical property of the NiSi2 was thought to be related to its formation temperature, i.e. at a zero-mismatch temperature of 380 °C, which resulted in minimizing the stress and stress-induced defects involved in its formation as well as cooling process. |
| Databáze: | OpenAIRE |
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