| Autor: |
Kai Liang Zhang, Zhi Xiang Hu, Kai Song, Qi Wang, Fang Wang |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
Applied Mechanics and Materials. :1-4 |
| ISSN: |
1662-7482 |
| DOI: |
10.4028/www.scientific.net/amm.130-134.1 |
| Popis: |
A sandwich device structure of MIM (metal/insulator/metal) is designed and its metal-insulator transition induced by an external electric field is investigated. VOxfilms were deposited on several different substrates by dc magnetic sputtering at room temperature. The device of Pt/VOx/Cu/Ti/SiO2/Si exhibited steady bipolar resistance switching behaviors between high resistive state (HRS) and low resistive state (LRS) with-0.4V/0.3V operation voltage (SET/RESET), while the devices of Pt/VOx/V/Cu/Ti/SiO2/Si, Pt/VOx/Al/Ti/SiO2/Si and Pt/VOx/Pt/Ti/SiO2/Si didn’t show this steady characteristic. From the comparison of these devices based on different substrates, the Schottky Emission model was quoted to explain this resistance switching characteristic in Pt/VOx/Cu/Ti/SiO2/Si device. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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