(Invited) Transparent Amorphous Oxide Semiconductors for System on Panel Applications

Autor: Chur Shyang Fuh, Li Feng Teng, Li Wei Chu, Po-Tsun Liu, Yang Shun Fan
Rok vydání: 2013
Předmět:
Zdroj: ECS Transactions. 50:257-268
ISSN: 1938-6737
1938-5862
DOI: 10.1149/05008.0257ecst
Popis: Po-Tsun Liu, Li-Wei Chu, Li-Feng Teng, Yang-Shun Fan and Chur-Shyang Fuh 1. Department of Photonics & Display Institute, National Chiao Tung University, Hsinchu, Taiwan, 30010, R.O.C. 2. Department of Photonics & Institute of ElectroOptical Engineering, National Chiao Tung University, Hsinchu, Taiwan, 30010, R.O.C 3. Department of Electronics Engineering & Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, 300, R.O.C CPT Building, Room 412, 1001 Ta-Hsueh Rd. Hsin-Chu 300, Taiwan, R.O.C. Transparent amorphous oxide semiconductors (TAOSs) have been attracting substantial attention in recent years as candidate materials for the use of thin film transistors (TFTs) in next generation flat panel displays (FPDs) technology due to the characteristics of high carrier mobility, transparent to visible light, easy to fabrication, and can be deposited at room temperature. System-on-panel (SoP) concept has been proposed to enable various functional devices, such as driver, sensor, memory and controller devices, to be integrated on a single panel for achieving high-performance, low-cost and more compact display products. To realize the SoP technology, the electronic devices with different functions are preferred to have the same materials for manufacture with ease. In this paper, we will first develop a novel technology to achieve high-performance TAOS-TFT by microwave annealing process at room temperature. Then, the TAOS-based nonvolatile resistive random access memory (RRAM) technology also is introduced. Finally, gate driver on array (GOA) consisted of AMOS-TFTs is proposed for SoP applications. In the past, the application of microwave process was devoted to dielectric ceramic and glass materials [1]. In this work, we introduce the microwave heating process in TAOS-TFT technology for the first time. For the typical furnace annealing, the thermal energy is transferred to the material of interest by creating a temperature gradient. Microwave heating process can directly transfer the energy to the target materials by the absorption of microwave energy throughout the volume of the material. This microwave annealing has the advantages of uniform and rapid heating process and effectively shorten manufacture period, and suppresses the occurrence of unexpected diffusion. We have successful fabricated the high-performance IGZO TFT with mobility of 13.5 cm/Vs, threshold voltage of 3.28 V, and subthreshold swing of 0.43 V/decade by microwave annealing process for 100 sec. The IGZO TFT device structure and electrical characteristics are shown in Fig. 1. This device performance is well competitive with the counterpart of IGZO TFT annealed at 450 for 1 hr in a thermal furnace.
Databáze: OpenAIRE
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