High gain monolithic p-HEMT W-band four-stage low noise amplifiers

Autor:	S.W. Duncan, S.E. Brown, E. Fischer, Abdollah Eskandarian, N.E. Byer, W.P. Berk, B. Golja, S.P. Svensson, B.C. Kane, D.-W. Tu, D.M. Gill, S. Weinreb
Rok vydání:	2002
Předmět:	Materials science business.industry Amplifier Electrical engineering Electrical element High-electron-mobility transistor Noise figure Low-noise amplifier Gallium arsenide chemistry.chemical_compound W band chemistry Optoelectronics business Monolithic microwave integrated circuit
Zdroj:	Proceedings of 1994 IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium.
DOI:	10.1109/mcs.1994.332149
Popis:	Two monolithic W-band four-stage LNA's based on 0.1 /spl mu/m AlGaAs-InGaAs-GaAs p-HEMT technology were developed. One with integral waveguide coupling probes has achieved a noise figure of 4.0 dB with a gain of 30.8 dB at 94 GHz; the other has a gain of 31.7 dB with a noise figure of 5.9 dB at 102 GHz. This is the highest gain yet reported for a single chip W-band amplifier. The chips features CPW circuit elements and compact size for low-cost production, single-polarity bias requirement, and a minimum of DC bonding pads. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::156dd1b4c90173661e9a6aca1356a9b2 https://doi.org/10.1109/mcs.1994.332149 Zobrazit plný text záznamu