| Autor: |
P. Sadewater, Rudolf Schlangen, E. Le Roy, B. Simmnacher, Christian Boit, U. Kerst, T. Lundquist, R. Leihkauf |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
International Symposium for Testing and Failure Analysis. |
| ISSN: |
0890-1740 |
| Popis: |
The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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