Performance evaluation of pass-transistor-based circuits using monolayer and bilayer 2-D transition metal dichalcogenide (TMD) MOSFETs for 5.9nm node
| Autor: | Chang-Hung Yu, Ching-Te Chuang, Jun-Teng Zheng, Pin Su |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science 010304 chemical physics Pass transistor logic business.industry Bilayer Nanotechnology Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences Transition metal Transmission gate 0103 physical sciences Monolayer Hardware_INTEGRATEDCIRCUITS Optoelectronics Node (circuits) business Hardware_LOGICDESIGN Electronic circuit |
| Zdroj: | 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA). |
| Popis: | We comprehensively evaluate and benchmark the performance of pass-transistor logic (PTL) circuits using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on ITRS 2028 node. Our study indicates that the higher V T of bilayer TMD devices significantly degrades the performance of single pass-transistor based circuits compared with the monolayer counterparts despite the higher mobility of bilayer TMD devices. The effect can be mitigated by using full transmission gate or providing a complementary path. |
| Databáze: | OpenAIRE |
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