Fabrication of Undoped and N+ Microcrystalline si Films Using SiH2Ci2

Autor:	Jae Ho Yoo, Hong Bin Jeon, Min Park, Jin Jang, Kyung Ha Lee, Jung Mok Jun, Jae Seong Byun
Rok vydání:	1995
Předmět:	symbols.namesake Materials science Fabrication Microcrystalline Band gap Remote plasma Analytical chemistry symbols Crystalline volume fraction Conductivity Raman spectroscopy Volumetric flow rate
Zdroj:	MRS Proceedings. 377
ISSN:	1946-4274 0272-9172
Popis:	We have studied the growth of undoped and n+ μc-Si:H (:CI) films by Remote Plasma CVD using SiH4/SiH2Cl2/H2/He mixtures. It was found that the μc-Si film can be fabricated by increasing flow rate of SiH2Cl2 and/or H2. The deposited undoped μc-Si film exhibited a maximum crystalline volume fraction of 85 %, obtained from Raman spectroscopy. The n-type μc-Si film, deposited with SiH4/SiH2Cl2/H2/PH3/He mixtures, shows a room temperature conductivity of 2 S/cm, conductivity activation energy of 29.8 meV and optical band gap of-2.0 eV. The optical band gap of n-type μc-S1 deposited using SiH2Cl2 is much higher compared to conventional μc-Si film.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::15630bf976a5e3c6c4755eb87c1ca4bf https://doi.org/10.1557/proc-377-75 Zobrazit plný text záznamu Full text from SpringerLink