Biaxial and Uniaxial Compressive Stress Implemented in Ge(Sn) pMOSFET Channels by Advanced Reduced Pressure Chemical Vapor Deposition Developments

Autor:	Liesbeth Witters, Clement Merckling, Bastien Douhard, Benjamin Vincent, Roger Loo, Dennis K.J. Lin, Olivier Richard, Matty Caymax, Laura Nyns, Marc Heyns, Hugo Bender, Federica Gencarelli, Alain Moussa, Wilfried Vandervorst
Rok vydání:	2011
Předmět:	Materials science Compressive strength Reduced pressure chemical vapor deposition Composite material
Zdroj:	ECS Transactions. 41:239-248
ISSN:	1938-6737 1938-5862
Popis:	Three advanced architectures for ultimate progress in Ge p-Metal Oxide Semiconductor Field Effect Transistors are discussed in this paper. Different routes for stress implementations in Ge channels, either biaxial or uniaxial, are proposed by advanced selective Chemical Vapor Deposition techniques. Selective SiGe Strained Relaxed Buffer growth in Shallow Trench Isolation is first discussed to implement biaxial compressive strained Ge Quantum Wells on top of it. Next, innovative GeSn chemical vapor deposition technique is described in order to build either uniaxial strained Ge channel with GeSn Source/Drain stressors or compressively biaxial strained GeSn Quantum Well channels on Ge buffer layers.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1561b32fd14be5164493dbd78a1e561d https://doi.org/10.1149/1.3633304 Zobrazit plný text záznamu