Atomic Layer Deposited Aluminum Oxide Passivation Layers for Crystalline Silicon: Effects of Deposition Temperature on Film and Interface Structures

Autor:	Toyohiro Chikyow, K. Matsumoto, A. Ogura, Haruhiko Yoshida, Kenichirou Takahashi, K. Arafune, T. Tachibana, Shinichi Satoh, Norihiro Ikeno, Hyunju Lee, Naomi Sawamoto
Rok vydání:	2011
Předmět:	Materials science Chemical engineering Passivation Interface (computing) Nanotechnology Crystalline silicon Layer (electronics) Aluminum oxide Deposition temperature
Zdroj:	Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::153f7825f030675a4a30bced18aa6bf7 https://doi.org/10.7567/ssdm.2011.p-14-1 Zobrazit plný text záznamu