Surface-Atom Core-Level Shift in GaAs(111)A-2×2

Autor:	Tsung-Hung Chiang, Gunther K. Wertheim, J. Kwo, Tun-Wen Pi, Minghwei Hong, M. L. Huang, Bor-Rong Chen
Rok vydání:	2012
Předmět:	Surface (mathematics) Near threshold Materials science Excited state Atom General Physics and Astronomy Core level Electron Atomic physics Kinetic energy Line (formation)
Zdroj:	Journal of the Physical Society of Japan. 81:064603
ISSN:	1347-4073 0031-9015
Popis:	Guided by the known reconstruction of the GaAs(111)A-2×2 surface, the Ga 3d electron surface atom core-level shifts was found to be 0.30±0.01 eV and that of the surface As atoms with three-fold Ga coordination -0.25±0.01 eV. The four-fold coordinated As surface atoms were not resolved from the bulk line. Measureable surface effects are confined to the outermost mixed Ga and As layer. The effective spin–orbit ratios are typically below the standard value of 2/3 at kinetic energies near threshold. This phenomenon is related to final state of the excited photo-electron. The inelastic mean-free path was found to average 4 A with a minimum near a kinetic energy of 80 eV.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::153cd301348e24d5cb5d959613e0fbd6 https://doi.org/10.1143/jpsj.81.064603 Zobrazit plný text záznamu