Planarization of Bit-Patterned Surface Using Gas Cluster Ion Beams
| Autor: | Keisuke Nagato, Noriaki Toyoda, Tomokazu Hirota, Yasuo Sakane, Hiroshi Tani, Tetsuya Hamaguchi, Isao Yamada, Masayuki Nakao |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Ion beam business.industry Acceleration voltage Electronic Optical and Magnetic Materials Ion Transmission electron microscopy Etching (microfabrication) Chemical-mechanical planarization Optoelectronics Electrical and Electronic Engineering Atomic physics business Lithography Electron-beam lithography |
| Zdroj: | IEEE Transactions on Magnetics. 45:3503-3506 |
| ISSN: | 0018-9464 |
| DOI: | 10.1109/tmag.2009.2023064 |
| Popis: | The planarization of the bit-patterned surface using gas cluster ion beams (GCIBs) was studied. By applying the features of gas cluster ions, such as low-energy irradiation and surface smoothing effects, it is possible to carry out effective smoothing of a patterned surface. We fabricated a dot pattern on the Si substrate as a model structure for bit-patterned media by electron beam lithography and inductive coupled plasma etching. A carbon overcoat covered the Si dots. On Ar-GCIB irradiation at an acceleration voltage of 20 kV, the Si dots with a diameter of 150 nm were planarized. The required ion dose for planarization was 5 times 1014 ions/cm2. The cross-sectional transmission electron microscope images showed that only the carbon overcoat layer was planarized without a change in the structure of Si dots. Etching depth of the overcoat increased linearly with the ion dose, indicating good reproducibility of the method with precise control of residual thickness. |
| Databáze: | OpenAIRE |
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