Growth and Characteristics of a-Plane GaN/ZnO/GaN Heterostructure

Autor: Shing-Chung Wang, Li-Wei Tu, Yu-Pin Lan, Wen-Feng Hsieh, Huei Min Huang, Chiao Yun Chang, Hao-Chung Kuo, Tien-Chang Lu
Rok vydání: 2013
Předmět:
Zdroj: MRS Proceedings. 1538:303-307
ISSN: 1946-4274
0272-9172
DOI: 10.1557/opl.2013.550
Popis: The crystal structure of a-plane GaN/ZnO heterostructures on r-plane sapphire was investigated by using the XRD and TEM measurment. It was found the formation of (220) ZnGa2O4 and crystal orientation of semipolar (10$\bar 1$3) GaN at GaN/ZnO interface. The epitaxial relation of normal surface direction are the sapphire (1$\bar 1$02) // a-GaN (11$\bar 2$0) and ZnGa2O4 (220) // semi-polar GaN (10$\bar 1$$\bar 3$). Beside, the emission peak energy of ZnO appears shift about 60 meV in the GaN/ZnO/GaN heterostructures due to the re-crystallization of ZnO layer with Ga or N atom and the formation of the localized state.
Databáze: OpenAIRE
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