The thermoelectric properties of heavily doped hot-pressed germanium-silicon alloys
Autor: | D M Rowe, R W Bunce |
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Rok vydání: | 1969 |
Předmět: |
Materials science
Acoustics and Ultrasonics Condensed matter physics Silicon Doping chemistry.chemical_element Germanium Atmospheric temperature range Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Thermal conductivity chemistry Electrical resistivity and conductivity Seebeck coefficient Thermoelectric effect |
Zdroj: | Journal of Physics D: Applied Physics. 2:1497-1502 |
ISSN: | 0022-3727 |
DOI: | 10.1088/0022-3727/2/11/302 |
Popis: | The electrical resistivity and Seebeck coefficient have been measured on a series of hot-pressed Ge-Si alloys over the temperature range 300-1200 °K and Hall mobility in the range 300-1000 °K. The results indicate that some specimens possess mobilities and Seebeck coefficients close to single-crystal values. Making use of available thermal resistivity data the maximum efficiency of a single couple generating device constructed from the best p-type and n-type alloys was computed to be 8% when operating between 300-1000 °K. |
Databáze: | OpenAIRE |
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