Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor®

Autor:	Conor Martin, A.V. Kondratyev, M. Dauelsberg, E.V. Yakovlev, H. Protzmann, Roman Talalaev, Ej Thrush, Adam Boyd, Michael Heuken
Rok vydání:	2007
Předmět:	Chemistry Nuclear engineering Nucleation Mineralogy Experimental validation Injector Chemical vapor deposition Nitride Condensed Matter Physics law.invention Inorganic Chemistry law Scientific method Materials Chemistry Wafer Metalorganic vapour phase epitaxy
Zdroj:	Journal of Crystal Growth. 303:318-322
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2006.11.151
Popis:	The modelling and subsequent experimental validation of nitride growth processes in commercial, production scale multi-wafer reactors is investigated with focus on group-III nitride compounds GaN and InGaN. The paper also deals with the development of group-III nitride growth processes at elevated process pressures, highlighting the effects of gas-phase nucleation phenomena on the growth efficiency of GaN. In addition, the latest hardware and process improvements to the Planetary Reactor ® technology are presented, with focus on the development using a modelling approach, of a new gas injector design for III-nitride growth. Subsequent experimental validation of the new injector design, and its flexibility to changing process regimes for GaN and InGaN will be demonstrated for the 42×2″ Planetary Reactor ® .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::151778f6b5551a34897857e50ba2598e https://doi.org/10.1016/j.jcrysgro.2006.11.151 Zobrazit plný text záznamu Full Text from ScienceDirect