SWIR-NIR Highly Absorbent Si1-xSnx Alloy Film on Si(100) Substrate: Crystal Structure, Optical Properties and Thermal Stability
| Autor: | Sergei A. Kitan, D. L. Goroshko, E.A. Chusovitin, Nikolay G. Galkin, S.A. Dotsenko, Konstantin N. Galkin |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Radiation Materials science Silicon business.industry Band gap Alloy chemistry.chemical_element 02 engineering and technology Substrate (electronics) Crystal structure engineering.material 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences chemistry Attenuation coefficient 0103 physical sciences engineering Optoelectronics General Materials Science Thermal stability 0210 nano-technology Tin business |
| Zdroj: | Defect and Diffusion Forum. 386:86-94 |
| ISSN: | 1662-9507 |
| Popis: | Thin (200-600 nm) Si-Sn alloy films were grown under ultrahigh vacuum conditions by co-deposition of Si and Sn on the Si (100) substrate at room temperature. Investigations of the film structure by X-ray diffraction showed the preservation of the amorphous structure of Si-Sn films without the contribution of the Si1-xSnx alloy with sphalerite lattice at Sn concentration in the range of x=0.14-0.19. Analysis of optical spectra and calculations showed that an amorphous Si-Sn film with a Sn concentration of 19% is a semiconductor with indirect fundamental optical transition with very high absorption at photon energies 0.2 – 1.0 eV. It was found that precipitation of β-Sn occurs with an increase of Sn concentration up to 40%, which is accompanied by an increase in the reflection coefficient to 0.6-0.8 at photon energies below 0.8 eV. The limited temperature stability of amorphous Si-Sn films is shown for high-energy and long-term (10 minutes) laser irradiation due to the formation of metallic precipitates of β-Sn. |
| Databáze: | OpenAIRE |
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