Analysis of direct wafer bond IGBTs with heavily doped N+ buffer layer

Autor:	A. Taomoto, H.-Y. Tsoi, P. Tam, G. Tam, S.L. Tu
Rok vydání:	2002
Předmět:	Switching time Materials science Ion implantation Fall time business.industry Wafer bonding Doping Electrical engineering Optoelectronics Wafer business Voltage drop Voltage
Zdroj:	8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings.
DOI:	10.1109/ispsd.1996.509511
Popis:	High-speed IGBTs fabricated using direct wafer bonding and implanted N+ buffer layer are described and analyzed in this paper. The trade-off between on-state voltage drop and turn-off fall time can be controlled by varying the N+ implant dose prior to the wafer bonding process. 800 V IGBTs with switching time less than 100 nanoseconds and V/sub ce(sat)/ as low as 1.4 V at 100 A/cm/sup 2/ have been obtained. This excellent performance is achieved without utilizing any conventional lifetime control techniques.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::14fd828c32bf65b153a5e9578d7b461f https://doi.org/10.1109/ispsd.1996.509511 Zobrazit plný text záznamu