Polycrystalline silicon film formation at low temperature using ultra-high-frequency plasma enhanced chemical vapor deposition
| Autor: | Shigeaki Sumiya, Toshio Goto, B. Mebarki, Seiji Samukawa, Tsutomu Tsukada, Masafumi Ito, Masaru Hori, Ryohei Yoshida |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Silicon Mechanical Engineering Nanocrystalline silicon Analytical chemistry Mineralogy chemistry.chemical_element Substrate (electronics) engineering.material Condensed Matter Physics Silane Amorphous solid chemistry.chemical_compound Polycrystalline silicon chemistry Mechanics of Materials Plasma-enhanced chemical vapor deposition engineering General Materials Science Thin film |
| Zdroj: | Materials Letters. 41:16-19 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/s0167-577x(99)00097-x |
| Popis: | Polycrystalline silicon (poly-Si) thin films with crystalline fraction of nearly 75% and 82% were successfully synthesized at low substrate temperatures of 100 and 300°C, respectively, by using ultra-high-frequency plasma employed silane/hydrogen mixture gases. In situ ellipsometry analysis confirmed that a relatively thin amorphous intermediate layer less than 15 nm in thickness was formed at a substrate temperature of 300°C in the early stage of the growth. |
| Databáze: | OpenAIRE |
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