Investigation of Ni/Co bilayer salicidation process for sub-40nm gate technology
| Autor: | Hyun-Su Kim, U-In Chung, Byung Il Ryu, Sung-Tae Kim, Seong Hwee Cheong, Gil Heyun Choi, Sug-Woo Jung, Jong-Ho Yun, Eun Ji Jung, Joo Tae Moon, Byung Hee Kim |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Bilayer chemistry.chemical_element Condensed Matter Physics Salicide Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Nickel chemistry Chemical engineering Thermal stability Electrical and Electronic Engineering Cobalt Leakage (electronics) |
| Zdroj: | Microelectronic Engineering. 82:449-453 |
| ISSN: | 0167-9317 |
| Popis: | The nickel/cobalt bilayer salicidation technology which enables an agglomeration-free silicidation even on narrow-line poly gate was investigated and described in detail. Si/Ni/Co and Si/Co/Ni bilayer stack were evaluated and the effect of thickness ratio between Ni and Co on phase transformation and on thermal stability was examined and the optimum thickness ratio was extracted electrically. For the first time, the Ni/Co bilayer salicidation process was adopted in sub-40nm poly gate and consequently, the good gate poly resistance and leakage characteristics were obtained. Therefore, Ni/Co bilayer can be regarded as a suitable solution for salicide process in sub-40nm high performance devices. |
| Databáze: | OpenAIRE |
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