Subbandgap Optical Differential Body-Factor Technique and Characterization of Interface States in SOI MOSFETs

Autor:	Mihee Uhm, Jieun Lee, Won Hee Lee, Euiyoun Hong, Dae Hwan Kim, Hyojoon Seo, Daeyoun Yun, Dong Myong Kim, Jaeman Jang, Hagyoul Bae, Hyunjun Choi
Rok vydání:	2012
Předmět:	Materials science business.industry Subthreshold conduction Silicon on insulator Subthreshold slope Electronic Optical and Magnetic Materials Threshold voltage Logic gate MOSFET Optoelectronics Wafer Electrical and Electronic Engineering business Photonic crystal
Zdroj:	IEEE Electron Device Letters. 33:922-924
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2012.2194981
Popis:	A distribution of interface states (Dit) in SOI MOSFETs has been characterized by a subbandgap optical differential body-factor (SODBoF) technique. We adopted a subbandgap (Eph
Databáze:	OpenAIRE
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