Thickness determination of ultrathin oxide films and its application in magnetic tunnel junctions
| Autor: | Feng X. Liu, Chengxiang Ji, Bharat B. Pant, Y. Austin Chang, Allan E. Schultz, Jianhua Yang, Ying Yang |
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| Rok vydání: | 2006 |
| Předmět: |
Auger electron spectroscopy
Magnetoresistance business.industry Chemistry Analytical chemistry Oxide Condensed Matter Physics Electronic Optical and Magnetic Materials Barrier layer Tunnel magnetoresistance Tunnel effect chemistry.chemical_compound X-ray photoelectron spectroscopy Tunnel junction Materials Chemistry Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Journal of Electronic Materials. 35:2142-2146 |
| ISSN: | 1543-186X 0361-5235 |
| Popis: | In this study we propose a method for utilizing x-ray photoelectron spectroscopy (XPS), a surface sensitive technique, coupled with a wedge-shaped sample to determine the thickness of an ultrathin aluminum oxide tunnel barrier layer (∼2 nm) in a magnetic tunnel junction (MTJ). The uncertainty of the measured thickness is analyzed and the factors affecting the accuracy of this measurement are discussed as well as the advantages over the use of high-resolution transmission electron microscopy. Using this approach, we were able to quickly optimize the thickness of an aluminum oxide layer in a fabricated MTJ, yielding a high magnetoresistance ratio. In addition to XPS, one can also use Auger electron spectroscopy to determine the thickness of the oxidized tunnel barrier layer. This method can also be applied to other tunnel barrier materials such as the nitrides. |
| Databáze: | OpenAIRE |
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