Solid cross linked-poly(ethylene oxide) electrolyte gate dielectrics for organic thin-film transistors
| Autor: | Choongik Kim, Sungmin Cho, Dongkyu Kim, Yeongkyu Yun, Taeshik Earmme, Jeongyeon Lee, SungYong Seo |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
chemistry.chemical_classification
Materials science General Chemical Engineering Gate dielectric Oxide 02 engineering and technology Polymer Electrolyte Dielectric 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Amorphous solid chemistry.chemical_compound chemistry Chemical engineering Thin-film transistor Ionic conductivity 0210 nano-technology |
| Zdroj: | Journal of Industrial and Engineering Chemistry. 92:303-308 |
| ISSN: | 1226-086X |
| DOI: | 10.1016/j.jiec.2020.09.015 |
| Popis: | Solid polymer electrolyte gate dielectric based on cross-linked poly(ethylene oxide) (CPEO) was developed and employed for organic thin-film transistors (OTFTs). Mechanical stability, high areal capacitance, and amorphous morphology of CPEO were achieved via the use of polyhedral oligomeric silsesquioxane (POSS) as cross-linker, dissolved ion [EMIM][TFSI] as electrolyte, and PEO with low molecular weight as polymer matrix, respectively. The resulting solid polymer electrolyte showed excellent insulating properties with low leakage current density (1.8 × 10−7 A cm−2 at 1 V) and high capacitance per area (∼ 1 μF cm−2 at 100 Hz). Furthermore, dielectric properties of the developed polymer electrolytes including ionic conductivity as well as segmental relaxation time were investigated. The polyelectrolyte dielectric was employed for bottom-gate/top-contact organic thin-film transistors and the resulting devices showed decent electrical performance with a carrier mobility of 0.12 (±0.03) cm2 V−1 s−1 and a current on/off ratio of 103 at low operating voltage of 5 V. |
| Databáze: | OpenAIRE |
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