Slip and the effect ofHe4at thesilicon3interface

Autor: S. M. Tholen, J. M. Parpia
Rok vydání: 1991
Předmět:
Zdroj: Physical Review Letters. 67:334-337
ISSN: 0031-9007
DOI: 10.1103/physrevlett.67.334
Popis: We present measurements of the slip of normal 3 He contained between a pair of highly polished silicon plates mounted on a torsional oscillator. The resulting effective viscosity of pure normal 3 He is not consistent with simple slip theory and shows characteristics previously observedonly with a surface layer of 4 He present. We have also observed the onset of specularity induced by the addition of 4 He. This onset occurs after 2 monolayers of 4 He have been completed and can be associated with superfluidity of the 4 He
Databáze: OpenAIRE