Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Autor:	Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi
Rok vydání:	2023
Zdroj:	Gallium Nitride Materials and Devices XVIII.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1492a44cc4b0d5f01da6317355bd1cb0 https://doi.org/10.1117/12.2646233 Zobrazit plný text záznamu