Simultaneously Enhancing Internal and Extraction Efficiencies of GaN-based Light Emitting Diodes Via Chemical-Wet-Etching Patterned-Sapphire-Substrate (CWE-PSS)

Autor:	Shawn-Yu Lin, Kar Wai Ng, Y. J. Lee, Shing-Chung Wang, Allan S. P. Chang, Hao-Chung Kuo, Zu-Po Yang, Kei May Lau, Tien-Chang Lu, C. H. Chiu
Rok vydání:	2007
Předmět:	Materials science business.industry law Extraction (chemistry) Sapphire substrate Optoelectronics business Light-emitting diode law.invention
Zdroj:	ECS Transactions. 11:225-230
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.2783876
Popis:	We report a chemical-wet-etching patterned-sapphire-substrate (CWE-PSS) that simultaneously enhances internal quantum efficiency and light extraction efficiency of gallium nitride based light-emitting-diode (LED). According to transmission electron microscopy (TEM) images, the threading dislocations penetrating into active region was dramatically reduced in the CWE-PSS structure compared to the planar sapphire substrate, i.e. enhancement of internal quantum efficiency. And according to the measurement of angular dependent diffraction power, CWE-PSS also serves as a diffraction grating which diffracts guided light into escaping cones, further improving light extraction efficiency of LED device.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::14907d69aed535648d51e6ab64f9e44c https://doi.org/10.1149/1.2783876 Zobrazit plný text záznamu