Assessing simultaneous effect of Ar/O2 ratio and process pressure on ammonia sensing properties of reactive DC magnetron sputtered SnO2 thin films
| Autor: | Vikas Saini, Ajay Agarwal, Ashok Kumar Sharma, Ravindra Kumar Jha, Mohd Nahid, Rahul Prajesh, Pubali Chaudhury, Vinay Goyal, Jitendra Bhargava |
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| Rok vydání: | 2021 |
| Předmět: |
Materials science
Argon Mechanical Engineering chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Tin oxide 01 natural sciences Oxygen 0104 chemical sciences Ammonia chemistry.chemical_compound Chemical engineering chemistry Mechanics of Materials Sputtering Physical vapor deposition Cavity magnetron General Materials Science Thin film 0210 nano-technology |
| Zdroj: | Materials Letters. 286:129239 |
| ISSN: | 0167-577X |
| DOI: | 10.1016/j.matlet.2020.129239 |
| Popis: | Tin Oxide (SnO2) has established itself as excellent receptor in chemiresistive detection of ammonia gas in last two decades. There have been several routes developed to obtain a pristine SnO2 film over this time however, physical vapor deposition remains an attractive route for the same due to the control it provides for the growth and its scalability for industry scale production. In this work, we report on the effect of oxygen and argon ratio at different pressure in sputtering unit on the sensitivity of tin oxide. In particular, our investigation revealed that the device based on SnO2 thin film obtained at an sputtering pressure of 10 mTorr and Ar/O2 ratio of 50/50 possess highest response (~27.97% for 30 ppm of ammonia) at optimal temperature of 220 ℃. |
| Databáze: | OpenAIRE |
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