Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
| Autor: | Hiroshi Ishiwara, Young-Uk Song, Shun-ichiro Ohmi |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Transistor Electrical engineering Electronic Optical and Magnetic Materials law.invention Organic semiconductor Pentacene chemistry.chemical_compound Semiconductor chemistry law MOSFET Optoelectronics Electrical and Electronic Engineering Thin film business Extrinsic semiconductor Diode |
| Zdroj: | IEICE Transactions on Electronics. :767-770 |
| ISSN: | 1745-1353 0916-8524 |
| DOI: | 10.1587/transele.e94.c.767 |
| Popis: | In order to realize stable n-type characteristics of pentacene for applying to the organic complementary metal-oxide-semiconductor field-effect transistors (CMOS), we have fabricated pentacene based MOS diodes using ultra-thin Yb layer such as 0.5-3nm between gate insulator and pentacene. From the results of capacitance-voltage (C-V) measurements, excellent n-type C-V characteristics of the devices with 1 and 2nm-thick Yb were observed even though the devices were measured in air. These results suggested that the n-type semiconductor characteristics of pentacene are able to be improved by the thin Yb interfacial layer. Furthermore, the improved n-type characteristics of pentacene will enable the fabrication of flexible complementary logic circuits utilizing one kind organic semiconductor. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|