Preparation of Bi-layered ferroelectric thin film by thernal MOCVD

Autor:	Kazuo Shinozaki, Hiroshi Funakubo, Hideaki Machida, Norimasa Nukaga, Nobuysau Mizutani, Hiroshi Kokubun, Katsuyuki Ishikawa
Rok vydání:	1999
Předmět:	Materials science Vapor pressure Ferroelectric thin films Analytical chemistry Chemical vapor deposition Metalorganic vapour phase epitaxy Thin film Combustion chemical vapor deposition Condensed Matter Physics Epitaxy Bi layered Electronic Optical and Magnetic Materials
Zdroj:	Ferroelectrics. 232:123-128
ISSN:	1563-5112 0015-0193
DOI:	10.1080/00150199908015781
Popis:	SrBi2Ta2O9 thin films were prepared by metalorganic chemical vapor deposition(MOCVD) from Bi(CH3)3 – Sr[Ta(O. C2H5)6]2,-O2 system. Bi(CH3)3 is liquid and take a higher vapor pressure and gas concentration stability than conventionally used Bi sources, Bi(C7H7)3 and Bi(C6H5)3. The single phase of SrBi2Ta2O9 film was successfully prepared at 670[ddot]C on (111)Pt/Ti/SiO2/Si substrate. Epitaxially grown SrBi2TaO9 with c-axis orientation was also deposited on (100)SrTiO3 substrates at low temperature of 640[ddot]C.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::14814da02d287e08fcd65f6beced1fba https://doi.org/10.1080/00150199908015781 Zobrazit plný text záznamu