Variability sources in nanoscale bulk FinFETs and TiTaN- a promising low variability WFM for 7/5nm CMOS nodes
| Autor: | Mandar S. Bhoir, Nihar R. Mohapatra, Thomas Chiarella, Naoto Horiguchi, Jerome Mitard, Lars A. Ragnarsson |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
0303 health sciences Materials science 01 natural sciences Threshold voltage Computational physics 03 medical and health sciences symbols.namesake CMOS 0103 physical sciences symbols Electrical measurements Work function Titan (rocket family) Nanoscopic scale 030304 developmental biology |
| Zdroj: | 2019 IEEE International Electron Devices Meeting (IEDM). |
| Popis: | A systematic methodology to segregate different variability sources from electrical measurements, in sub-10nm W fin FinFETs, is proposed. The threshold voltage variation, coming from gate-metal work-function and oxide charge variations, is shown to be the major contributor to in-wafer variability. The contribution of FER, GER and RDF to V t variability is negligible. TiTaN, a new work function metal (WFM) for the metal gate-stack, is introduced and it provides ~37% less total and ~27% less random variability. |
| Databáze: | OpenAIRE |
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