Tunable electronic and optical properties of SnC/BAs heterostructure by external electric field and vertical strain
| Autor: | Xiao-Qing Deng, R.Q. Sheng, Zhen-Hua Zhang, Z.Q. Fan |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Physics
business.industry Band gap General Physics and Astronomy Heterojunction Electronic structure Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 01 natural sciences 010305 fluids & plasmas symbols.namesake Photovoltaics Electric field 0103 physical sciences symbols Optoelectronics Direct and indirect band gaps van der Waals force 010306 general physics business Absorption (electromagnetic radiation) |
| Zdroj: | Physics Letters A. 384:126150 |
| ISSN: | 0375-9601 |
| DOI: | 10.1016/j.physleta.2019.126150 |
| Popis: | Based on the first-principles method, we investigate the electronic structure of SnC/BAs van der Waals (vdW) heterostructure and find that it has an intrinsic type-II band alignment with a direct band gap of 0.22 eV, which favors the separation of photogenerated electron–hole pairs. The band gap can be effectively modulated by applying vertical strain and external electric field, displaying a large alteration of band gap via the strain and experiencing an indirect-to-direct band gap transition. Moreover, the band gap of the heterostructure varies almost linearly with external electric field, and the semiconductor-to-metal transition can be realized in the presence of a strong electric field. The calculated band alignment and the optical absorption reveal that the SnC/BAs heterostructure could present an excellent light-harvesting performance. Our designed heterostructure is expected to have great potential applications in nanoelectronic devices and photovoltaics and optical properties. |
| Databáze: | OpenAIRE |
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