Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods
| Autor: | A. A. Mironenko, A. C. Rudy, A. V. Perminov, V. D. Chernomordick, Alexey A. Popov, V. N. Gusev, A. E. Berdnikov |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Band gap Insulator (electricity) Chemical vapor deposition Conductivity Low frequency Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Plasma-enhanced chemical vapor deposition Optoelectronics Silicon oxide business Nanoscopic scale |
| Zdroj: | Semiconductors. 47:641-646 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | The current-voltage characteristics of MIS (metal-insulator-semiconductor) structures with insulators based on silicon oxide, fabricated by low-frequency (55 kHz) plasma-enhanced chemical vapor deposition are studied. A specific feature of the used insulators is that there are inclusions of particles of other materials with narrower band gaps present. It is found that such structures possess the property of bipolar conductivity switching. The MIS structures with a multilayer insulator containing additional nanoscale siliconnitride layers exhibit the best characteristics of the conductivity switching effect. |
| Databáze: | OpenAIRE |
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