Wavy channel transistor for area efficient high performance operation

Autor: Hossain M. Fahad, Muhammad Mustafa Hussain, G. A. Torres Sevilla, Aftab M. Hussain
Rok vydání: 2013
Předmět:
Zdroj: Applied Physics Letters. 102:134109
ISSN: 1077-3118
0003-6951
Popis: We report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device architecture is capable of high performance operation compared to conventional FinFETs with comparatively higher area efficiency and lower chip latency as well as lower power consumption.
Databáze: OpenAIRE