Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs

Autor:	Tsunenobu Kimoto, Jun Suda, Yuichiro Nanen
Rok vydání:	2014
Předmět:	Materials science business.industry Mechanical Engineering Transistor Condensed Matter Physics law.invention chemistry.chemical_compound chemistry Mechanics of Materials law Surface field Electronic engineering Silicon carbide Optoelectronics Breakdown voltage General Materials Science business
Zdroj:	Materials Science Forum. :943-946
ISSN:	1662-9752
Popis:	Characteristics of high-voltage lateral silicon carbide metal-oxide-semiconductor field-effect transistors (MOSFETs) with various reduced surface field (RESURF) structures were simulated. Breakdown voltage was enhanced from 5300 V for single-zone RESURF to 7400 V for two-zone, and to 7600 V for quasi-modulated RESURF MOSFETs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1441b1f5e0ed7b1c1e1ab0a1ed37ee46 https://doi.org/10.4028/www.scientific.net/msf.778-780.943 Zobrazit plný text záznamu