| Autor: |
Jong Ho Lee, Da Il Eom, Hoon Joo Na, Nam-Kyun Kim, Hyeong Joon Kim, Jeong Hyun Moon, Wook Bahng, Jeong Hyuk Yim, Ho Keun Song, Kuan Yew Cheong |
| Rok vydání: |
2007 |
| Předmět: |
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| Zdroj: |
Materials Science Forum. :643-646 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.556-557.643 |
| Popis: |
We have investigated the electrical properties of metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited La2O3, thermal-nitrided SiO2, and atomic-layer-deposited La2O3/thermal-nitrided SiO2 on n-type 4H-SiC. A significant reduction in leakage current density has been observed in La2O3 structure when a 6-nm thick thermal nitrided SiO2 has been sandwiched between the La2O3 and SiC. However, this reduction is still considered high if compared to sample having thermal-nitrided SiO2 alone. The reasons for this have been explained in this paper. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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